Diffusion Based Ex-Situ Group V (P, AS, SB, BI) Doping in Polycrystalline CDTE Thin Film Solar Cells - Research & Economic Development - The University of Alabama

Diffusion Based Ex-Situ Group V (P, AS, SB, BI) Doping in Polycrystalline CDTE Thin Film Solar Cells

The Problem:

Cadmium Telluride (CdTe) solar cells are the second most common photovoltaic (PV) technology in the world, and they can be manufactured quickly and inexpensively, providing a lower‐cost alternative to conventional silicon‐based technologies. However, current commercial CdTe thin film solar cells, which are created using Group I element (Cu) doping, experience degradation over the long-term.

The Solution:

Researchers at the University of Alabama have developed an improved doping process using Group V dopants for CdTe solar cells that address the issue of long‐term degradation. Group V is a group of elements in the periodic table, including nitrogen, phosphorus, arsenic, antimony, and bismuth. This technology uses a post deposition Group V doping process in CdTe thin film solar cells, resulting in high efficiency, long durability, and the potential to overcome the long-term degradation of the commercial doping methods.

 

Group V Doping Process

 

Benefits:

·   Higher efficiency (>18%)
·   Longer stability and durability
·   Long term degradation resistance
·   Easy operation & manufacturing
·   Improves environmental robustness of CdTe cells
 
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Patent Information:

For Information, Contact:

Lynnette Scales
Administrative Assistant
The University of Alabama
(205) 348-5433
liscales@ua.edu

Inventors:

Feng Yan
Keywords: